2011/09/27 ver.5 page 1 SPN8878B n-channel enhancement mode mosfet description applications the SPN8878B is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. the SPN8878B has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. z power management in note book z powered system z dc/dc converter z load switch features pin configuration to-252 to-251 part marking to-252 to-251 ? 30v/20a,r ds(on) = 14m ? @v gs =10v ? 30v/15a,r ds(on) = 19m ? @v gs =4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-252 and to-251 package design
2011/09/27 ver.5 page 2 SPN8878B n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN8878Bt252rgb to-252 SPN8878B SPN8878Bt251tgb to-251 SPN8878B SPN8878Bt252rgb : tape reel ; pb ? free ; halogen - free SPN8878Bt251tgb : tube ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage vdss 30 v gate ?source voltage vgss 20 v t a =25 18 continuous drain current t a =100 id 13 a pulsed drain current idm 40 a continuous drain current is 5 a to-252-2l 40 power dissipation t a =25 to-251 pd 55 w avalanche energy with single pulse ( tj=25 , l = 0.14mh , i as = 30a , v dd = 20v. ) eas 63 mj operating junction temperature tj -55/150 storage temperature range tstg -55/150 thermal resistance-junction to ambient r ja 100 /w
2011/09/27 ver.5 page 3 SPN8878B n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.6 1.8 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =24v,v gs =0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds 5v,v gs =10v 40 a v gs = 10v,i d =20a 0.012 0.014 drain-source on-resistance r ds(on) v gs =4.5v,i d =15a 0.015 0.019 ? forward transconductance gfs v ds =15v,i d =20a 15 s diode forward voltage v sd i s =40a,v gs =0v 0.8 1.5 v dynamic total gate charge q g 10 18 gate-source charge q gs 2.8 gate-drain charge q gd v ds =15v,v gs =10v i d = 50a 2.0 nc input capacitance c iss 850 output capacitance c oss 158 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 120 pf t d(on) 10 15 turn-on time t r 4 12 t d(off) 15 30 turn-off time t f v dd =15v,r l =0.3 ? i d 50a,v gen =10v r g =1 ? 10 15 ns
2011/09/27 ver.5 page 4 SPN8878B n-channel enhancement mode mosfet typical characteristics
2011/09/27 ver.5 page 5 SPN8878B n-channel enhancement mode mosfet typical characteristics
2011/09/27 ver.5 page 6 SPN8878B n-channel enhancement mode mosfet typical characteristics
2011/09/27 ver.5 page 7 SPN8878B n-channel enhancement mode mosfet to-252 package outline
2011/09/27 ver.5 page 8 SPN8878B n-channel enhancement mode mosfet to-251 package outline
2011/09/27 ver.5 page 9 SPN8878B n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2004 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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